Structural and optical properties of 0.98 mu m InGaAs/InGaAsP strained-compensated multiple quantum well structures grown by gas-source molecular beam epitaxy

The effects of growth temperature on the structural and optical properties of gas-source molecular beam epitaxy grown 0.98 mu m InGaAs/lnGaAsP strain- compensated multiple quantum well structures were studied by transmission e lectron microscopy (TEM), double crystal X-ray diffraction and photolumines cence measurements. It was found that high quality of quantum well structur es can be obtained at a lower growth temperature. A higher growth temperatu re caused an immiscible growth for the InGaAsP alloy from the observation o f the TEM images. As a result, the optical and structural quality of the qu antum well structure was drastically degraded. (C) 1999 Published by Elsevi er Science B.V. All rights reserved.