Cyclohexylphosphine: synthesis and application to metalorganic vapor-phaseepitaxy of InP

We have investigated the synthesis and the thermal decomposition of cyclohe xylphosphine and its application to the metalorganic vapor-phase epitaxy of InP. Cyclohexylphosphine is a liquid compound with a 20 degrees C vapor pr essure of 7.2 hPa. The thermal decomposition reaction is detected at temper atures as low as 400 degrees C. By conducting coupled experiments of thermo lysis and mass spectrometry the formation of PH, species can be proven. Det ails of the decomposition pathways are given. InP layers with good surface morphologies could be grown at atmospheric pressure and at substrate temper atures between 500 degrees C and 560 degrees C. The surface morphology refl ects the role of PHn and P-2/P-4 species during the growth process. (C) 199 9 Elsevier Science B.V. All rights reserved.