Indium droplet formation during molecular beam epitaxy of InGaN

Critical indium flux resulting in liquid droplet formation on the surface o f InGaN ternary compound is measured as a function of temperature using las er reflectometry. In contrast to other III-V compounds In droplets are foun d to be formed on the surface of the growing crystal both under metal- and N-rich conditions. (C) 1999 Elsevier Science B.V. All rights reserved.