Electronic states in magnetic nanostructures

Citation
Fj. Himpsel et al., Electronic states in magnetic nanostructures, J MAGN MAGN, 200(1-3), 1999, pp. 456-469
Citations number
79
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
ISSN journal
03048853 → ACNP
Volume
200
Issue
1-3
Year of publication
1999
Pages
456 - 469
Database
ISI
SICI code
0304-8853(199910)200:1-3<456:ESIMN>2.0.ZU;2-Q
Abstract
The electronic states responsible for oscillatory magnetic coupling, giant magnetoresistance (GMR), and spin-polarized tunneling are explored. They oc cupy well-defined locations in (E,k) space. Their energy E has to be within a few kT of the Fermi level, a range that is now becoming accessible to hi gh-resolution photoemission. Particular attention is paid to k-regions near the Fermi level crossings of the s, p-band where a sizable group velocity is combined with a d-like magnetic splitting and spin-polarization. These e lectronic states can be tailored by quantization in structures with single- digit nanometer dimensions, such as two-dimensional quantum wells and one-d imensional arrays of stripes and dots. Such arrays can be produced by self- assembly on top of stepped silicon surfaces, (C) 1999 Elsevier Science B.V. All rights reserved.