Junction parameters for silicon devices characterization

An innovative method for device characterization is developed to qualify mi croelectronic devices. The method is based on parameter extraction from the junction I-V characteristics. Their evolution during electrical aging and ionizing radiation experiments allows an evaluation of the magnitude of the degradation. Results obtained with commercial samples show a signature of both manufacturer and technological processes. This method is easy to imple ment in a control process for device characterization. (C) 1999 Elsevier Sc ience Ltd. All rights reserved.