Assessment of worst case dielectric failure rate based on statistical samples with pure intrinsic failure distributions

Authors
Kerber, M
Citation
M. Kerber, Assessment of worst case dielectric failure rate based on statistical samples with pure intrinsic failure distributions, MICROEL REL, 39(6-7), 1999, pp. 755-758
Citations number
2
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS RELIABILITY
ISSN journal
00262714 → ACNP
Volume
39
Issue
6-7
Year of publication
1999
Pages
755 - 758
Database
ISI
SICI code
0026-2714(199906/07)39:6-7<755:AOWCDF>2.0.ZU;2-F
Abstract
Assessment of failure rates of integrated MOS circuits on basis of accelera ted reliability testing is investigated. A procedure is proposed to predict an upper limit of dielectric failure rates for arbitrary cumulative breakd own distributions. This allows to derive a worst case number in any variety of experimental results. (C) 1999 Elsevier Science Ltd. All rights reserve d.