Model for the oxide thickness dependence of SILC generation based on anodehole injection process

Authors
Jahan, C Bruyere, S Ghibaudo, G Vincent, E Barla, K
Citation
C. Jahan et al., Model for the oxide thickness dependence of SILC generation based on anodehole injection process, MICROEL REL, 39(6-7), 1999, pp. 791-795
Citations number
11
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS RELIABILITY
ISSN journal
00262714 → ACNP
Volume
39
Issue
6-7
Year of publication
1999
Pages
791 - 795
Database
ISI
SICI code
0026-2714(199906/07)39:6-7<791:MFTOTD>2.0.ZU;2-G
Abstract
A new model for the oxide thickness dependence of the SILC generation has b een proposed on the basis of defects created by anode hole injection. This model which has been validated on oxides with thickness down to approximate to 3nm, allows the explanation of the bell-shaped behavior of the SILC var iation with oxide thickness and predicts a strong reduction of the SILC int ensity for ultra thin oxides operated in the direct tunneling regime. (C) 1 999 Elsevier Science Ltd. All rights reserved.