Study of Stress Induced Leakage Current by using high resolution measurements

Authors
De Salvo, B Ghibaudo, G Pananakakis, G Guillaumot, B Reimbold, G
Citation
B. De Salvo et al., Study of Stress Induced Leakage Current by using high resolution measurements, MICROEL REL, 39(6-7), 1999, pp. 797-802
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS RELIABILITY
ISSN journal
00262714 → ACNP
Volume
39
Issue
6-7
Year of publication
1999
Pages
797 - 802
Database
ISI
SICI code
0026-2714(199906/07)39:6-7<797:SOSILC>2.0.ZU;2-7
Abstract
A thorough characterization of stress-induced leakage currents (SILCs) for a 10nm-thick oxide, by using the floating-gate technique, is presented. The obtained current is modeled by a volume-limited conduction mechanism. Expe rimental and model suggest that SILC conduction mechanism is the same in th in as well as in thick oxides. (C) 1999 Published by Elsevier Science Ltd. All rights reserved.