Temperature dependence of hot carrier induced MOSFET degradation at low gate bias

This paper reports a new experimental finding on the temperature dependence of the substrate current and hot carrier induced device degradation at low gate bias. It has been found that the substrate current increases and the drain cut-rent degradation is more significant for high operating temperatu re at low gate bias. It has been observed that the hot carrier induced perf ormance degradation of a latch-type input buffer increases at the elevated temperature. (C) 1999 Elsevier Science Ltd. All rights reserved.