Laser beam backside probing of CMOS integrated circuits

Citation
S. Kasapi et al., Laser beam backside probing of CMOS integrated circuits, MICROEL REL, 39(6-7), 1999, pp. 957-961
Citations number
14
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS RELIABILITY
ISSN journal
00262714 → ACNP
Volume
39
Issue
6-7
Year of publication
1999
Pages
957 - 961
Database
ISI
SICI code
0026-2714(199906/07)39:6-7<957:LBBPOC>2.0.ZU;2-J
Abstract
We have developed a new, fully integrated circuit timing analysis tool that provides measurements of electrical waveforms by direct access to the diff usion nodes through the backside of CMOS integrated circuits. The system, k nown as the IDS 2000, allows the device to be driven at full speed by a wid e variety of testers. Utilising an actively modelocked infrared laser beam, the system can detect waveforms with ultrahigh bandwidth (similar to 10 GH z) from CMOS devices using stroboscopic sampling. The system has proven to be an powerful tool for design debug and failure analysis of flip chip pack aged IC as well as any other packaged IC where the silicon side can be thin ned and directly accessed. (C) 1999 Elsevier Science Ltd. All rights reserv ed.