Degradation of AlGaAs/GaAs power HFET's under on-state and off-state breakdown conditions

Authors
Dieci, D Sozzi, G Menozzi, R Lanzieri, C Cetronio, A Canali, C
Citation
D. Dieci et al., Degradation of AlGaAs/GaAs power HFET's under on-state and off-state breakdown conditions, MICROEL REL, 39(6-7), 1999, pp. 1055-1060
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS RELIABILITY
ISSN journal
00262714 → ACNP
Volume
39
Issue
6-7
Year of publication
1999
Pages
1055 - 1060
Database
ISI
SICI code
0026-2714(199906/07)39:6-7<1055:DOAPHU>2.0.ZU;2-B
Abstract
This work shows a detailed comparison of the degradation caused by off-stat e and on-state breakdown conditions in power AlGaAs/GaAs HFET's. Stress exp eriments carried out at gate-drain reverse currents up to 3.3 mA/mm (for a total of more than 700 h) show a remarkably larger degradation for the off- state stress, due to more pronounced electron heating at any fixed value of gate reverse current. The degradation modes include V-T and R-D increase a nd l(DSS) and g(m) reduction. (C) 1999 Elsevier Science Ltd. All rights res erved.