Quality and mechanical reliability assessment of wafer-bonded micromechanical components

Citation
M. Petzold et al., Quality and mechanical reliability assessment of wafer-bonded micromechanical components, MICROEL REL, 39(6-7), 1999, pp. 1103-1108
Citations number
11
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS RELIABILITY
ISSN journal
00262714 → ACNP
Volume
39
Issue
6-7
Year of publication
1999
Pages
1103 - 1108
Database
ISI
SICI code
0026-2714(199906/07)39:6-7<1103:QAMRAO>2.0.ZU;2-Q
Abstract
Strength tests and fracture mechanics models for Silicon wafer-bonded compo nents are presented which can be applied during the development of bonding technologies, for the yield improvement and failure analysis as well as for the reliability assessment of micromechanical sensors and actuators. Speci al attention is given to the influences of atomic bonding strength, the int erface voids and the notches caused by etching steps prior to bonding on th e fracture limit. If wafer-bonded interfaces are exposed to a mechanical lo ading for an extended time, e.g. in the order of months or years, stress co rrosion effects decrease the bonding strength. As a consequence, stressed s ensors and actuators fabricated by wafer bonding can suddenly fail during a pplication after a load-dependent lifetime. Based on an appropriate fractur e mechanics model, the time-to-failure data could be theoretically predicte d. (C) 1999 Elsevier Science Ltd. All rights reserved.