Strength tests and fracture mechanics models for Silicon wafer-bonded compo
nents are presented which can be applied during the development of bonding
technologies, for the yield improvement and failure analysis as well as for
the reliability assessment of micromechanical sensors and actuators. Speci
al attention is given to the influences of atomic bonding strength, the int
erface voids and the notches caused by etching steps prior to bonding on th
e fracture limit. If wafer-bonded interfaces are exposed to a mechanical lo
ading for an extended time, e.g. in the order of months or years, stress co
rrosion effects decrease the bonding strength. As a consequence, stressed s
ensors and actuators fabricated by wafer bonding can suddenly fail during a
pplication after a load-dependent lifetime. Based on an appropriate fractur
e mechanics model, the time-to-failure data could be theoretically predicte
d. (C) 1999 Elsevier Science Ltd. All rights reserved.