Physical limits and lifetime limitations of semiconductor devices at high temperatures

Authors
Citation
W. Wondrak, Physical limits and lifetime limitations of semiconductor devices at high temperatures, MICROEL REL, 39(6-7), 1999, pp. 1113-1120
Citations number
15
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS RELIABILITY
ISSN journal
00262714 → ACNP
Volume
39
Issue
6-7
Year of publication
1999
Pages
1113 - 1120
Database
ISI
SICI code
0026-2714(199906/07)39:6-7<1113:PLALLO>2.0.ZU;2-A
Abstract
In many applications of electronics, a growing demand for devices being cap able of operating at increased temperatures is developing. In automotive an d aerospace industry, the replacement of mechanical or hydraulic systems by electronics requires harsh environmental conditions. Furthermore, the oil- well business, military, industrial, chemical, and consumer electronics sho w increasing interest in higher operating temperatures. In this paper, the influence of temperature on semiconductor device charact eristics is discussed with regard to physical limits for device operation. Different semiconductor materials are compared with respect to high tempera ture electronics, and an overview of the state-of-the-art of high-temperatu re devices is given. With standard silicon technology, high operation tempe ratures (200 degrees C) can be reached with reduced performance, the use of SiC enables electronic devices for much higher temperatures (600 degrees C ). For practical use, device lifetime becomes the limiting factor at increa sed temperatures, especially chip metallisation systems and packaging techn ologies are critical factors for device lifetime in most cases. (C) 1999 El sevier Science Ltd. All rights reserved.