Power cycling on press-pack IGBTs: measurements and thermomechanical simulation

Citation
P. Cova et al., Power cycling on press-pack IGBTs: measurements and thermomechanical simulation, MICROEL REL, 39(6-7), 1999, pp. 1165-1170
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS RELIABILITY
ISSN journal
00262714 → ACNP
Volume
39
Issue
6-7
Year of publication
1999
Pages
1165 - 1170
Database
ISI
SICI code
0026-2714(199906/07)39:6-7<1165:PCOPIM>2.0.ZU;2-3
Abstract
Press-pack IGBTs are increasing their market-share, especially for traction applications. As packaging performance is a key factor for a successful pr oduct, there is a great interest in defining optimal solutions in terms of geometry, materials and mechanical loading. To support IGBT reliability ass essment we developed a testing rig for accelerated testing of a single chip under controlled pressure conditions. In parallel, we created a thermomech anical simulation of the chip/testing rig assembly for the determination of internal stresses and strains due to actual operation. Test results and pr eliminary failure analysis following power cycling show the possibility of predicting the degradation according to different mechanisms induced by the combined effect of pressure and temperature fluctuation. (C) 1999 Elsevier Science Ltd. All rights reserved.