Plasma-based ion implantation of a square bar is modeled using a parti
cle-in-cell plasma simulation for three different size bars. When the
sheath width is significantly greater than the bar width, it is found
that the incident ion dose is largest at the center of the bar and dec
reases precipitously at the corners. When the sheath width is comparab
le to the bar width, the incident dose is largest near to, but not at,
the corners. It may be possible to optimize dose uniformity by stradd
ling these two regimes. (C) 1997 American Institute of Physics.