Optoelectronic properties and applications of rare-earth-doped GaN

Authors
Steckl, AJ Zavada, JM
Citation
Aj. Steckl et Jm. Zavada, Optoelectronic properties and applications of rare-earth-doped GaN, MRS BULL, 24(9), 1999, pp. 33-38
Citations number
35
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MRS BULLETIN
ISSN journal
08837694 → ACNP
Volume
24
Issue
9
Year of publication
1999
Pages
33 - 38
Database
ISI
SICI code
0883-7694(199909)24:9<33:OPAAOR>2.0.ZU;2-Z