FIELD-EMISSION FROM SURFACE-STATES OF SILICON

Authors
HUANG QA QIN M ZHANG B SIN JKO
Citation
Qa. Huang et al., FIELD-EMISSION FROM SURFACE-STATES OF SILICON, Journal of applied physics, 81(11), 1997, pp. 7589-7594
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
81
Issue
11
Year of publication
1997
Pages
7589 - 7594
Database
ISI
SICI code
0021-8979(1997)81:11<7589:FFSOS>2.0.ZU;2-O
Abstract
Field emission from a single level surface state is modelled and numer ically estimated. Field emission current from the surface state is dom inant at low fields while field emission current from the conduction b and is dominant at high fields due to not enough electrons being suppl ied for the surface state. The field emission Fowler-Nordheim plot sho ws no linearity. (C) 1997 American Institute of Physics.