M. Passlack et al., ADVANCING METAL-OXIDE-SEMICONDUCTOR THEORY - STEADY-STATE NONEQUILIBRIUM CONDITIONS, Journal of applied physics, 81(11), 1997, pp. 7647-7661
This article investigates steady-state nonequilibrium conditions in me
tal-oxide-semiconductor (MOS) capacitors. Steady-state nonequilibrium
conditions are of significant interest due to the advent of wide-gap s
emiconductors in the arena of MS (or metal-insulator-semiconductor) de
vices and due to the scaling of oxide thickness in Si technology. Two
major classes of steady-state nonequilibrium conditions were studied b
oth experimentally and theoretically: (i) steady-state deep depletion
and (ii) steady-state low level optical generation. It is found that t
he identification and subsequent understanding of steady-state nonequi
librium conditions is of significant importance for correct interpreta
tion of electrical measurements such as capacitance-voltage and conduc
tance-voltage measurements, Basic implications of steady-state nonequi
librium conditions were derived for both MOS capacitors with low inter
faces state density Di, and for oxide semiconductor interfaces with a
pinned Fermi level. Further, a photoluminescence power spectroscopy te
chnique is investigated as a complementary tool for direct-gap semicon
ductors to study Di, and to monitor the interface quality during devic
e fabrication. (C) 1997 American Institute of Physics.