ADVANCING METAL-OXIDE-SEMICONDUCTOR THEORY - STEADY-STATE NONEQUILIBRIUM CONDITIONS

This article investigates steady-state nonequilibrium conditions in me tal-oxide-semiconductor (MOS) capacitors. Steady-state nonequilibrium conditions are of significant interest due to the advent of wide-gap s emiconductors in the arena of MS (or metal-insulator-semiconductor) de vices and due to the scaling of oxide thickness in Si technology. Two major classes of steady-state nonequilibrium conditions were studied b oth experimentally and theoretically: (i) steady-state deep depletion and (ii) steady-state low level optical generation. It is found that t he identification and subsequent understanding of steady-state nonequi librium conditions is of significant importance for correct interpreta tion of electrical measurements such as capacitance-voltage and conduc tance-voltage measurements, Basic implications of steady-state nonequi librium conditions were derived for both MOS capacitors with low inter faces state density Di, and for oxide semiconductor interfaces with a pinned Fermi level. Further, a photoluminescence power spectroscopy te chnique is investigated as a complementary tool for direct-gap semicon ductors to study Di, and to monitor the interface quality during devic e fabrication. (C) 1997 American Institute of Physics.