Radiation hard strip detectors for large-scale silicon trackers

Major challenges in building silicon strip detectors for future high lumino sity experiments are the high radiation level and the huge number of sensor s required for the construction of the precision layers of the complete tra cking system. Single-sided p(+)n strip detectors for ATLAS SCT designed and fabricated at the MPI Semiconductor Laboratory have been exposed to 3 x 10 (14)/cm(2) 24 GeV protons. The major features of the design, including the biasing technique using implanted resistors, are discussed and results are presented. The technology was transferred to CiS, Germany, a company capabl e of the desired large-scale production. Results of this industrially fabri cated sensors look very promising and show the expected radiation hardness. (C) 1999 Published by Elsevier Science B.V. All rights reserved.