Design optimization of radiation-hard, double-sided, double-metal, AC-coupled silicon sensors

Authors
Ohsugi, T Iwata, Y Ohmoto, T Handa, T Fujita, K Kitabayashi, H Sato, K Satoh, S Takashima, R Nakano, I Yamamoto, K Yamamura, K
Citation
T. Ohsugi et al., Design optimization of radiation-hard, double-sided, double-metal, AC-coupled silicon sensors, NUCL INST A, 436(1-2), 1999, pp. 272-280
Citations number
14
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
ISSN journal
01689002 → ACNP
Volume
436
Issue
1-2
Year of publication
1999
Pages
272 - 280
Database
ISI
SICI code
0168-9002(19991021)436:1-2<272:DOORDD>2.0.ZU;2-E
Abstract
A double-sided, double metal, AC coupled readout silicon microstrip sensor (DDSMS) has been developed for the SVX-II, the upgrade vertex detector for CDF. Key issue in the development is to achieve sufficient radiation hardne ss for survival in the radiation environment of several kGy/yr. The require d high-voltage capability and the reduction of the readout capacitance of t he double-metal side were critical design goals. Detailed design methods to radiation-hard silicon sensors are discussed. (C) 1999 Elsevier Science B. V. All rights reserved.