Thick and large area PIN diodes for hard X-ray astronomy

Authors
Ota, N Murakami, T Sugizaki, M Kaneda, H Tamura, T Ozawa, H Kamae, T Makishima, K Takahashi, T Tashiro, M Fukazawa, Y Kataoka, J Yamaoka, K Kubo, S Tanihata, C Uchiyama, Y Matsuzaki, K Iyomoto, N Kokubun, M Nakazawa, T Kubota, A Mizuno, T Matsumoto, Y Isobe, N Terada, Y Sugiho, M Onishi, T Kubo, H Ikeda, H Nomachi, M Ohsugi, T Muramatsu, M Akahori, H
Citation
N. Ota et al., Thick and large area PIN diodes for hard X-ray astronomy, NUCL INST A, 436(1-2), 1999, pp. 291-296
Citations number
12
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
ISSN journal
01689002 → ACNP
Volume
436
Issue
1-2
Year of publication
1999
Pages
291 - 296
Database
ISI
SICI code
0168-9002(19991021)436:1-2<291:TALAPD>2.0.ZU;2-3
Abstract
Thick and large area PIN diodes for the hard X-ray astronomy in the 10-60 k eV range are developed. To cover this energy range in a room temperature an d in a low background environment, Si PIN junction diodes of 2 mm in thickn ess with 2.5 cm(2) in effective area were developed, and will be used in th e bottom of the Phoswich Hard X-ray Detector (HXD), on-board the ASTRO-E sa tellite. Problems related to a high purity Si and a thick depletion layer d uring our development and performance of the PIN diodes are presented in de tail. (C) 1999 Elsevier Science B.V. All rights reserved.