Current injection from a metal to a disordered hopping system. III. Comparison between experiment and Monte Carlo simulation

Citation
S. Barth et al., Current injection from a metal to a disordered hopping system. III. Comparison between experiment and Monte Carlo simulation, PHYS REV B, 60(12), 1999, pp. 8791-8797
Citations number
32
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
60
Issue
12
Year of publication
1999
Pages
8791 - 8797
Database
ISI
SICI code
0163-1829(19990915)60:12<8791:CIFAMT>2.0.ZU;2-F
Abstract
We have performed electric-field and temperature-dependent electron injecti on studies in an aluminum/tris(8-hydroxy-quinolinolato) aluminum/magnesium: silver single-layer organic light-emitting diode. Analysis of the observed injection currents in terms of the classic Fowler-Nordheim (FN) tunneling o r Richardson-Schottky (RS) thermionic emission proved to be inadequate. Whe reas, the FN-type behavior at high-electric fields must be considered accid ental, the injection currents qualitatively resemble those of the RS concep t. However, quantitative differences are observed concerning the RS coeffic ient, the prefactor current, and the temperature dependence. On the other h and, the experimental data are in excellent agreement with a recently prese nted Monte Carlo simulation [U. Wolf et al., Phys. Rev. B 59, 7507 (1999)] of carrier injection from a metal to an organic dielectric with random hopp ing sites.