Two-color picosecond and continuous-wave experiments on anti-Stokes and Stokes carrier-transfer phenomena in GaAslAl(x)Ga(1-x)As and InGaP2/AlxGa1-xAs heterostructures
Sc. Hohng et al., Two-color picosecond and continuous-wave experiments on anti-Stokes and Stokes carrier-transfer phenomena in GaAslAl(x)Ga(1-x)As and InGaP2/AlxGa1-xAs heterostructures, PHYS REV B, 60(12), 1999, pp. 8883-8889
We present direct evidence of the two-step absorption process in anti-Stoke
s photoluminescence in both GaAs/AlxGa1-xAs and InGaP2/AlxGa1-xAs heterostr
uctures using two-color picosecond and continuous-wave photoluminescence ex
periments. We show information about the lifetime of the defect states that
participate in the two-step absorption process. As a result, we conclude t
hat the long-lived states rather than excitons play the dominant role in th
e two-step absorption process. We also study the possible contribution of t
he two-step absorption process to Stokes carrier transfer in GaAs/AlxGa1-xA
s asymmetric double quantum well structures.