Anomalous selection rules and heavy-light hole beats: Stress effects in GaAs

Citation
Nh. Bonadeo et al., Anomalous selection rules and heavy-light hole beats: Stress effects in GaAs, PHYS REV B, 60(12), 1999, pp. 8970-8974
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
60
Issue
12
Year of publication
1999
Pages
8970 - 8974
Database
ISI
SICI code
0163-1829(19990915)60:12<8970:ASRAHH>2.0.ZU;2-L
Abstract
Time-resolved measurements of the coherent emission due to excitons in GaAs show a polarization-dependent phase shift of the heavy-light hole exciton beating observed in the linear optical response and deviations from the usu al polarization selection rules. The anomalies are ascribed to the presence of strain in the plane perpendicular to that of the light propagation. The data are in qualitative agreement with theoretical calculations based on t he strain-orbit Hamiltonian and a simple harmonic model for the excitonic r esonances.