AC-HALL EFFECT IN MULTILAYERED SEMICONDUCTORS

Citation
H. How et al., AC-HALL EFFECT IN MULTILAYERED SEMICONDUCTORS, Journal of lightwave technology, 15(6), 1997, pp. 1006-1011
Citations number
10
Categorie Soggetti
Optics
ISSN journal
07338724
Volume
15
Issue
6
Year of publication
1997
Pages
1006 - 1011
Database
ISI
SICI code
0733-8724(1997)15:6<1006:AEIMS>2.0.ZU;2-R
Abstract
A new technique is presented which exploits ac-Hall effect in the char acterization of layered semiconductor structures, The method involves the use of laser signals by means of optical fibers in the presence of a de magnetic bias field. Upon incidence the polarization of the opti cal signal is rotated via a Lorentz force due to the ac-Hall effect, A s such, the reflected waves carry informations on the Hall mobility of the charge carriers. The calculations show that ac-Hall reflection co efficient warrants sufficient intensity to be measured, Our theory is complete in the sense that depth profiling has been explicitly incorpo rated in the formulation.