AC-HALL EFFECT IN MULTILAYERED SEMICONDUCTORS

A new technique is presented which exploits ac-Hall effect in the char acterization of layered semiconductor structures, The method involves the use of laser signals by means of optical fibers in the presence of a de magnetic bias field. Upon incidence the polarization of the opti cal signal is rotated via a Lorentz force due to the ac-Hall effect, A s such, the reflected waves carry informations on the Hall mobility of the charge carriers. The calculations show that ac-Hall reflection co efficient warrants sufficient intensity to be measured, Our theory is complete in the sense that depth profiling has been explicitly incorpo rated in the formulation.