A new technique is presented which exploits ac-Hall effect in the char
acterization of layered semiconductor structures, The method involves
the use of laser signals by means of optical fibers in the presence of
a de magnetic bias field. Upon incidence the polarization of the opti
cal signal is rotated via a Lorentz force due to the ac-Hall effect, A
s such, the reflected waves carry informations on the Hall mobility of
the charge carriers. The calculations show that ac-Hall reflection co
efficient warrants sufficient intensity to be measured, Our theory is
complete in the sense that depth profiling has been explicitly incorpo
rated in the formulation.