LOW-TEMPERATURE GROWTH OF INGAAS GAAS STRAINED-LAYER SINGLE QUANTUM-WELLS/

InGaAs/GaAs strained-layer single quantum well (SSQW) structures have been grown at temperatures from 200 to 540 degrees C by migration enha nced epitaxy (MEE). Fabricated structures were characterized by compar ing the measured wavelength of photoluminescence (PL) emission peak wi th the theoretically calculated one for ideal quantum wells. In the SS QWs made at high temperatures (400 - 540 degrees C), large PL peak shi fts to the shorter wavelengths than the calculated ones were observed. This blue shift of the PL peak was attributed to the surface segregat ion and desorption of In atoms. Lowering the growth temperature of MEE below 300 degrees C, the In segregation was suppressed and the design ed PL wavelength from the SSQW was obtained. It was shown that the pre paration of GaAs (2 x 4) - As surface without excess As-sticking and t he long migration time for group III atoms were needed to achieve high PL intensity from SSQW.