Radiation chemistry of polymeric materials: novel chemistry and applications for microlithography

In the last two decades, major advances in fabricating very large scale int egration (VLSI) electronic devices have placed increasing demands on microl ithography, the technology used to generate today's integrated circuits. In 1970, state-of-the-art devices contained several thousand transistors with minimum features of 10-12 mu m. Today, they have several million transisto rs and minimum features of less than 0.3 mu m. Within the next 10-15 years, a new form of lithography will be required that routinely produces feature s of less than 0.2 mu m. Short-wavelength (deep-UV) photolithography and sc anning and projection electron-beam and X-ray lithography are the possible alternatives to conventional photolithography. The consensus candidate for the next generation of lithography tools is photolithography using 193 nm l ight. At this wavelength, the opacity of traditional materials precludes th eir use, and major research efforts to develop alternative materials are cu rrently underway. Notably, the materials being developed for these short UV wavelengths are demonstrating compatibility with the more advanced electro n-beam technologies. Materials properties must be carefully tailored to max imize lithographic performance with minimal sacrifice of other performance attributes, eg adhesion, solubility and RF plasma etching stability. (C) 19 99 Society of Chemical Industry.