Characterization of electrochemically etched tungsten tips for scanning tunneling microscopy

Citation
Ad. Muller et al., Characterization of electrochemically etched tungsten tips for scanning tunneling microscopy, REV SCI INS, 70(10), 1999, pp. 3970-3972
Citations number
9
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
REVIEW OF SCIENTIFIC INSTRUMENTS
ISSN journal
00346748 → ACNP
Volume
70
Issue
10
Year of publication
1999
Pages
3970 - 3972
Database
ISI
SICI code
0034-6748(199910)70:10<3970:COEETT>2.0.ZU;2-S
Abstract
Shape and composition of electrochemically etched tungsten tips for use in scanning tunneling microscopy (STM) were investigated in a transmission ele ctron microscope (TEM) with a Gathan imaging filter (GIP). The tips are pre pared by a lamella drop-off technique. We observe typical tip radii of less than 10 nm. After a storage of some days under ambient conditions, an amor phous oxide film is detectable. The electron energy-loss spectroscopy confi rms that the surface is contaminated by compounds that contain carbon, too. (C) 1999 American Institute of Physics. [S0034- 6748(99)01110-7].