SiGe virtual substrate N-channel heterojunction MOSFETs

Heterojunction MOSFETs (HMOSFETs), grown on a virtual substrate of SiGe and having a strained silicon channel, have been fabricated. A conventional si licon MOS process was used, including dry thermal oxidation and high temper ature source-drain annealing. Good transistor I-V characteristics were obta ined for devices having drawn gate lengths between 150 nm and 10 mu m and a n extrinsic transconductance of 220 mS mm(-1) is reported for the 150 nm ga te length device. Technology computer aided design (TCAD) is used to determ ine that the bulk low field mobility of the strained silicon which forms th e channel is 1500 cm(2) V-1 s(-1), while the source-drain series resistance is 1.5 Omega mm. Good agreement between simulated and experimental I-V dat a is obtained.