Influence of the minimization of self-scattering events on the Monte Carlosimulation of carrier transport in III-V semiconductors

Citation
Jm. Miranda et al., Influence of the minimization of self-scattering events on the Monte Carlosimulation of carrier transport in III-V semiconductors, SEMIC SCI T, 14(9), 1999, pp. 804-808
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN journal
02681242 → ACNP
Volume
14
Issue
9
Year of publication
1999
Pages
804 - 808
Database
ISI
SICI code
0268-1242(199909)14:9<804:IOTMOS>2.0.ZU;2-5
Abstract
This paper presents a procedure to improve the algorithm of Sangiorgi, Ricc o and Venturi for the calculation of the time of flight in Monte Carlo simu lations. The method is used to efficiently optimize the step function in wh ich the total scattering probability is discretized. The optimization crite rion suggested in this work can reduce the self-scattering events to less t han 30% in a fairly wide range of temperatures, applied fields and doping l evels. Different examples are presented to illustrate the advantages of the method.