Electron-phonon interaction in CdTe/CdMnTe/CdMgTe quantum wells

Citation
Xf. Wang et al., Electron-phonon interaction in CdTe/CdMnTe/CdMgTe quantum wells, SEMIC SCI T, 14(9), 1999, pp. 829-835
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN journal
02681242 → ACNP
Volume
14
Issue
9
Year of publication
1999
Pages
829 - 835
Database
ISI
SICI code
0268-1242(199909)14:9<829:EIICQW>2.0.ZU;2-6
Abstract
The optic vibrational (confined and interface) modes and the electron-phono n and hole-phonon interactions are obtained, in the dielectric continuum mo del, for two diluted magnetic semiconductor structures: a single well of Cd 1-xMnxTe/Cd1-yMgyTe with the magnetic ions in the well, and a double well o f CdTe/Cd1-xMnxTe, in which a thin layer of the magnetic material is grown in the middle of the structure. The scattering rates for the intra- and the inter-subband transitions are obtained for electrons and holes.