Total dose radiation effects of Pt/PZT/Pt ferroelectric capacitors fabricated by PLD method

Authors
Gao, JX Zheng, LR Huang, BP Song, ZT Yang, LX Fan, YJ Zhu, DZ Lin, CL
Citation
Jx. Gao et al., Total dose radiation effects of Pt/PZT/Pt ferroelectric capacitors fabricated by PLD method, SEMIC SCI T, 14(9), 1999, pp. 836-839
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN journal
02681242 → ACNP
Volume
14
Issue
9
Year of publication
1999
Pages
836 - 839
Database
ISI
SICI code
0268-1242(199909)14:9<836:TDREOP>2.0.ZU;2-E
Abstract
In order to study total dose radiation effects of PbZrxTi1-xO3 (PZT) film m ade with the pulsed excimer laser deposition (PLD) technique, hysteresis lo ops and capacitance-voltage (C-V) curves of PZT film capacitors have been m easured before and after gamma-ray irradiation. The results show that, in a range of 0-2 x 10(5) Gy (Si), with increasing total dose, the remanent pol arization 2P(r) increased while dielectric constant epsilon decreased. This can be explained by charges trapped by some defects during irradiation.