Comparison of conventional and thermally-stable cascode (TSC) AlGaAs/GaAs HBTs for microwave power applications

Authors
Hsu, SSH Bayraktaroglu, B Pavlidis, D
Citation
Ssh. Hsu et al., Comparison of conventional and thermally-stable cascode (TSC) AlGaAs/GaAs HBTs for microwave power applications, SOL ST ELEC, 43(8), 1999, pp. 1429-1436
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
43
Issue
8
Year of publication
1999
Pages
1429 - 1436
Database
ISI
SICI code
0038-1101(199908)43:8<1429:COCATC>2.0.ZU;2-T
Abstract
Conventional and thermally-stable cascode HBT (TSC-HBT) were fabricated usi ng a self-aligned emitter-base process on MOCVD-grown wafers. The pronounce d self-heating effect of conventional AlGaAs/GaAs HBT was reduced dramatica lly by the cascode design approach. The DC, small and large-signal characte ristics of conventional common-emitter (CE) and TSC-HBTs were compared and a direct assessment of the new HBT design is provided. (C) 1999 Elsevier Sc ience Ltd. All rights reserved.