SiC and GaN wide bandgap semiconductor materials and devices

Authors
Burk, AA O'Loughlin, MJ Siergiej, RR Agarwal, AK Sriram, S Clarke, RC MacMillan, MF Balakrishna, V Brandt, CD
Citation
Aa. Burk et al., SiC and GaN wide bandgap semiconductor materials and devices, SOL ST ELEC, 43(8), 1999, pp. 1459-1464
Citations number
28
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
43
Issue
8
Year of publication
1999
Pages
1459 - 1464
Database
ISI
SICI code
0038-1101(199908)43:8<1459:SAGWBS>2.0.ZU;2-K
Abstract
Wide bandgap semiconducting materials are promising candidates for high-pow er, high-temperature, microwave and optoelectronic devices because of their superior thermal and electrical properties in comparison to conventional s emiconductors. Recent developments in SIC and GaN materials and processing have enabled the demonstration of semiconductor devices with dramatically i mproved performance. Examples of these developments and new wide bandgap de vices are presented. (C) 1999 Published by Elsevier Science Ltd. All rights reserved.