Transferred-substrate HBT integrated circuits

Authors
Rodwell, M Lee, Q Mensa, D Guthrie, J Martin, SC Smith, RP Pullela, R Agarwal, B Jaganathan, S Mathew, T Long, S Long, S Long, S
Citation
M. Rodwell et al., Transferred-substrate HBT integrated circuits, SOL ST ELEC, 43(8), 1999, pp. 1489-1495
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
43
Issue
8
Year of publication
1999
Pages
1489 - 1495
Database
ISI
SICI code
0038-1101(199908)43:8<1489:THIC>2.0.ZU;2-V
Abstract
Using substrate transfer processes, we have fabricated heterojunction bipol ar transistors with submicron emitter-base and collector-base junctions, mi nimizing RC parasitics and increasing f(max) to 500 GHz. The process also p rovides a microstrip wiring environment on a low-epsilon(r) dielectric subs trate. Demonstrated small-scale ICs in the process include lumped and distr ibute amplifiers with bandwidths to 85 Hz, 48 GHz static frequency dividers , and 50GHz AGC/limiting amplifiers. (C) 1999 Elsevier Science Ltd. All rig hts reserved.