Study of altered layer formation in O-2(+)-bombarded SiGe alloys using a novel crossed bevel technique

A novel 'crossed bevel' technique has been used for the investigation of th e evolution of the altered layer that forms in a SiGe alloy under 8 keV O-2 (+) ion bombardment. Auger microscopy (MULSAM instrument) and low-energy io n beam bevelling (500 eV O-2(+)) Here used to composition-depth profile a h igh-energy (8 keV O-2(+)) bevel that contained the complete history of the altered layer. The sample was transferred in vacuo from the bevelling instr ument to the Anger microscope, The formation of a Ge-rich layer 15 nm below the altered layer surface, with an associated near-surface Ge depletion, w as observed, consistent with previous measurements. The growth of a surface oxygen implant was also seen, The importance of the development of this te chnique is that it will enable the powerful multispectral chemometric capab ility of the MULSAM instrument to be applied to altered layer redistributio n in the future. Copyright (C) 1999 John Wiley & Sons, Ltd.