Nonequilibrium processes on TiV surface induced by activation and absorption of gases

Citation
Vd. Borman et al., Nonequilibrium processes on TiV surface induced by activation and absorption of gases, VACUUM, 55(2), 1999, pp. 115-119
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
VACUUM
ISSN journal
0042207X → ACNP
Volume
55
Issue
2
Year of publication
1999
Pages
115 - 119
Database
ISI
SICI code
0042-207X(199911)55:2<115:NPOTSI>2.0.ZU;2-C
Abstract
X-ray photoelectron spectroscopy (XPS), high-resolution scanning electron m icroscopy (SEM) and atomic force microscopy (AFM) were used to investigate the effects of thermal activation in the surface chemistry and morphology o f a Ti70V30 gettering alloy. The samples were analysed as-received (after i n-air exposure) and after different annealing treatments up to 600 degrees C. For temperatures greater than 270 degrees C a progressive reduction of t he TiO2, initially found on the as-received samples, to TiOx (x < 2) occurs . The high concentration of vacancies in the TiOx (x < 2) lattice ensures t hat the surface oxide layer is transparent towards gas diffusion at relativ ely low temperatures. The activation process is accompanied by a roughening of the surface, probably induced by the condensation of vacancies in the n on-stoichiometric TiOx lattice. Vanadium appears to exert some promoting ef fect on this mechanism. In the 300-500 degrees C temperature range a fracti on of the carbon-based contamination on the surface forms carbides. These c arbides start to decompose at temperatures above 550 degrees C. (C) 1999 El sevier Science Ltd. All rights reserved.