ICP reactors for plasma processing

In 5 years time inductive coupled plasma sources have invaded the market of plasma processing. Such plasma sources are characterised by low plasma pot ential and offer the advantage of independent control of ion energy and ion flux to the processed surface. In reason of the high plasma density, high etch rates can be achieved at low pressure and controlled substrate bias, a necessary condition to meet with today and tomorrow's industrial and techn ological requirements in microelectronics and microtechnology fabrication.