Comparison of SiO2 and SiNx : H thin film properties deposited by high density plasma

In this paper, high density plasma (HDP) source has been used to deposit Si O2 and SiNx:H thin films. The films are performed without intentional subst rate heating using mixtures of SiH4+O-2 and SiH4+N-2. We report a compariso n of the physical and electrical properties of SiO2 and SiNx:H. Whatever th e nature of the dielectric, a high diluted SiH4 gas phase is necessary to a chieve high physical and electrical quality for the two films. The Al/SiO2/ Si and Al/SiNx:H/Si capacitors prepared by HDP technique have properties co mparable to those performed with oxide or nitride grown at high temperature on silicon (1000 degrees C and 800 degrees C respectively).