Characterization of a RF/dc-magnetron discharge for the sputter depositionof transparent and highly conductive ITO films

A RF-superimposed dc-magnetron sputter process for coating color filter mat erials with transparent and conducting ITO films was investigated. Tn this process, the sputtering cathode is excited simultaneously by dc- and RF-pow er (at 13.56 MHz). This work summarises the measured properties of the gas discharge. Some basic data of the deposited ITO films are given, also. The dependence of the RF portion of the total sputtering power on the discharge voltage has been monitored for different values of total power and process pressure. The ion energy distribution function of the positively charged i ons approaching the substrate surface has been measured using a retarding f ield plasma analyser probe. It was shown that the mean energy of the ions i ncreases with increasing RF portion of the total power. The electron temper ature in the body region of the gas discharge has been derived from measure ments of the optical emission of the excited species.