Preparation of P-rich InP surfaces via MOCVD and surface characterization in UHV

For the first time direct contamination-free transfer to UHV was achieved f or the P-rich InP(100) surface that is the easiest to prepare and control i n the MOCVD environment. To avoid contamination during transfer a commercia l MOCVD apparatus was modified to allow for transfer of samples to the 10(- 9) mbar UHV range within a very shea time (less than 20 s) [1]. Epitaxial I nP(100) films were prepared with TBP (tertiarybutylphosphine) and TMIn (tri methylindium) as precursors. In situ reflectance anisotropy spectroscopy (R AS) was carried out in the MOCVD environment. After transfer of the sample to UHV the same RAS spectrum was recovered. Auger-electron spectra (AES) co nfirmed the P-termination of the surface reconstructions suggested by RAS.