In the present paper, we report a procedure to calculate tunnel currents as
a function of the applied voltage, by an optimization of the master equati
on, for a highly disordered tunnel junction array. We take a very large sca
tter of the tunnel resistances of the individual junctions. In order to red
uce the number of equations, several approaches have still been considered
in the past. Here, we propose a procedure without any decoupling: we show t
hat relevant results can be obtained inside and outside the Coulomb gap onc
e the charge state range is automatically centered, already from a +/-2 tru
ncation of the equation set, for small offset charges or low applied voltag
e. This last step is achieved in a straightforward way, through the calcula
tion of the total tunneling rate leaving a given configuration. This has be
en assessed there for the first time on a highly disordered array of five j
unctions.