1.3-mu m polarization-insensitive optical amplifier structure based on coupled quantum wells

Citation
Ym. Zhang et Pp. Ruden, 1.3-mu m polarization-insensitive optical amplifier structure based on coupled quantum wells, IEEE J Q EL, 35(10), 1999, pp. 1509-1514
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
IEEE JOURNAL OF QUANTUM ELECTRONICS
ISSN journal
00189197 → ACNP
Volume
35
Issue
10
Year of publication
1999
Pages
1509 - 1514
Database
ISI
SICI code
0018-9197(199910)35:10<1509:1MPOAS>2.0.ZU;2-S
Abstract
We show that polarization-insensitive optical gain over a wide bandwidth ca n be realized in a coupled pseudomorphic multiple-quantum-well structure. T he barrier width is chosen such that heavy-hole subbands are grouped tightl y and light-hole subbands are widely separated in energy. For specific stra in conditions, the uppermost valence subbands, which have large occupation probability and strongly contribute to the gain, consist of a single light- hole subband and a group of coupled heavy-hole subbands, This arrangement g ives rise to balanced gains for the TE and TM polarizations. We present cal culated results for 1.3-mu m semiconductor optical amplifier structures bas ed on bands calculated in the framework of an eight-band k.p model. Two dif ferent material systems are examined, InAlGaAs and GaInAsP, on InP substrat es.