Ym. Zhang et Pp. Ruden, 1.3-mu m polarization-insensitive optical amplifier structure based on coupled quantum wells, IEEE J Q EL, 35(10), 1999, pp. 1509-1514
We show that polarization-insensitive optical gain over a wide bandwidth ca
n be realized in a coupled pseudomorphic multiple-quantum-well structure. T
he barrier width is chosen such that heavy-hole subbands are grouped tightl
y and light-hole subbands are widely separated in energy. For specific stra
in conditions, the uppermost valence subbands, which have large occupation
probability and strongly contribute to the gain, consist of a single light-
hole subband and a group of coupled heavy-hole subbands, This arrangement g
ives rise to balanced gains for the TE and TM polarizations. We present cal
culated results for 1.3-mu m semiconductor optical amplifier structures bas
ed on bands calculated in the framework of an eight-band k.p model. Two dif
ferent material systems are examined, InAlGaAs and GaInAsP, on InP substrat
es.