Temperature dependence of electrical and optical modulation responses of quantum-well lasers

Citation
T. Keating et al., Temperature dependence of electrical and optical modulation responses of quantum-well lasers, IEEE J Q EL, 35(10), 1999, pp. 1526-1534
Citations number
32
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
IEEE JOURNAL OF QUANTUM ELECTRONICS
ISSN journal
00189197 → ACNP
Volume
35
Issue
10
Year of publication
1999
Pages
1526 - 1534
Database
ISI
SICI code
0018-9197(199910)35:10<1526:TDOEAO>2.0.ZU;2-U
Abstract
We present theory and experiment for high-speed optical injection in the ab sorption region of a quantum-well laser and compare the results with those of the electrical injection including carrier transport effect, We show tha t the main difference between the two responses is the low-frequency roll-o ff. By using both injection methods, me obtain more accurate and consistent measurements of many important dynamic laser parameters, which include the differential gain, carrier lifetime, K factor, and gain compression factor . Temperature-dependent data of the test laser are presented which show tha t the most dominant effect is the linear degradation of differential gain a nd injection efficiency with increasing temperature. While the K-factor is insensitive to temperature variation for multiple-quantum-well lasers, we f ind that the carrier capture time and nonlinear gain suppression coefficien t decreases as temperature increases.