In rapid thermal processing (RTP) of semiconductor wafers precise control o
f wafer temperature is required throughout the process cycle to minimize do
pant redistribution as well as wafer warpage. A low-dimensional dynamic mod
el of RTP of semiconductor wafers is derived by using the Karhunen-Loeve-Ga
lerkin procedure (Park, H. M.; Cho, D. H. Chem. Eng. Sci. 1996, 51, 81) to
implement efficiently the optimal control scheme which ensures the transien
t temperature uniformity in RTP systems. The optimal control scheme employi
ng the low-dimensional dynamic model is compared with the conventional meth
od using the original partial differential equation and is found to be very
efficient without losing accuracy.