Formation and cascading decay of hollow Ar atoms at a Si surface

Citation
N. Stolterfoht et al., Formation and cascading decay of hollow Ar atoms at a Si surface, INT J MASS, 192, 1999, pp. 425-436
Citations number
38
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences
Journal title
INTERNATIONAL JOURNAL OF MASS SPECTROMETRY
ISSN journal
13873806 → ACNP
Volume
192
Year of publication
1999
Pages
425 - 436
Database
ISI
SICI code
1387-3806(19990927)192:<425:FACDOH>2.0.ZU;2-G
Abstract
Theoretical work was performed to investigate the formation and cascading d ecay of hollow Ar atoms during the interaction near a surface of Si. To exh ibit the static aspect of hollow atom formation below the surface, the dens ity functional theory was applied to evaluate results for electron charge d ensity plots of atomic orbitals. To study the dynamic properties of hollow Ar atoms, a complex cascade model was developed treating the successive fil ling of the K, L, and M shells via Auger transitions and collisional charge transfer above the surface and in the bulk. Information is provided for th e above- and below-surface contributions in previous experiments of Ar17+ i mpact on SiH using high-resolution x-ray spectroscopy. Clear evidence is gi ven that the velocity-dependent filling of the M shell plays a significant role. (C) 1999 Elsevier Science B.V.