Self-assembled monolayer and multilayer of trichlorogermane hexyl propylate and formation of GeO2/SiO2 interface

Monolayer and multilayer films of trichlorogermane hexyl propylate (Ge6) we re formed by the self-assembly method on hydroxylated silicon substrates. T he results showed that this kind of trichlorogermane had virtually the same self-assembly behavior as trichlorosilanes. Ellipsometry proved that the s elf-assembled monolayers and multilayers (SAMs) of Ge6 exhibited a tilted o rientation to the substrate surface. The multilayer film of Ge6 on silicon substrate was obtained by reducing the monolayer SAMs to alcohol hydroxylat ed surface with LiAlH4 and repeating the self-assembly process. The self-as sembled multilayer film was calcined in air at 500 degrees C to form a thin layer of GeO2 on SiO2/Si substrate surface. The XPS measurement detected t he formation of GeO2 layer. (C) 1999 Academic Press.