Optical constants of Bi2Te3 and Sb2Te3 measured using spectroscopic ellipsometry

Citation
H. Cui et al., Optical constants of Bi2Te3 and Sb2Te3 measured using spectroscopic ellipsometry, J ELEC MAT, 28(10), 1999, pp. 1111-1114
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF ELECTRONIC MATERIALS
ISSN journal
03615235 → ACNP
Volume
28
Issue
10
Year of publication
1999
Pages
1111 - 1114
Database
ISI
SICI code
0361-5235(199910)28:10<1111:OCOBAS>2.0.ZU;2-B
Abstract
In this work, we present the optical constants of bismuth telluride (Bi2Te3 ), and antimony telluride (Sb2Te3) determined using spectroscopic ellipsome try (SE). The spectral range of the optical constants is from 404 nm to 740 nm. Bi2Te3 and Sb2Te3 films with different thicknesses were grown by metal organic chemical vapor deposition (MOCVD). Multiple sample analysis (MSA) t echnique was employed in order to eliminate the parameter correlation in th e SE data analysis caused by the presence of the overalyer on top of Bi2Te3 and Sb2Te3 films. Optical constants and thicknesses for both Bi2Te3 and Sb 2Te3 overlayers were also determined. Independent Bi2Te3 and Sb2Te3 samples were used to check the results obtained. In addition, SE analysis was perf ormed on two Sb2Te3 samples after being etched in diluted NH4OH solution in order to characterize the overlayer and confirm the reliability of the res ults.