Surface-controlled growth of magnesium oxide thin films by atomic layer epitaxy

Authors
Putkonen, M Johansson, LS Rauhala, E Niinisto, L
Citation
M. Putkonen et al., Surface-controlled growth of magnesium oxide thin films by atomic layer epitaxy, J MAT CHEM, 9(10), 1999, pp. 2449-2452
Citations number
44
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS CHEMISTRY
ISSN journal
09599428 → ACNP
Volume
9
Issue
10
Year of publication
1999
Pages
2449 - 2452
Database
ISI
SICI code
0959-9428(199910)9:10<2449:SGOMOT>2.0.ZU;2-N
Abstract
Magnesium oxide thin films were deposited on soda lime and Si(100) substrat es by atomic layer epitaxy from Mg(thd)(2) and ozone. The depositions were carried out at 180-450 degrees C, where the growth parameters were studied in detail. A narrow temperature range of 225-250 degrees C was found where the growth was surface-controlled with growth rates of 0.27 and 0.22 Angstr om cycle(-1) on glass and silicon, respectively. MgO films were characteriz ed by X-ray diffraction (XRD), Rutherford backscattering (RBS), X-ray photo electron spectroscopy (XPS) and atomic force microscopy (AFM).