Potential of the sinter-HIP-technique for the development of high-temperature resistant Si3N4-ceramics

Citation
Mj. Hoffmann et al., Potential of the sinter-HIP-technique for the development of high-temperature resistant Si3N4-ceramics, J EUR CERAM, 19(13-14), 1999, pp. 2359-2366
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
ISSN journal
09552219 → ACNP
Volume
19
Issue
13-14
Year of publication
1999
Pages
2359 - 2366
Database
ISI
SICI code
0955-2219(1999)19:13-14<2359:POTSFT>2.0.ZU;2-5
Abstract
Silicon nitride ceramics were densified with the sintering additives Y2O3 a nd SiO2 by a two-step sinter-HIP-process. Three compositions with additive contents between 2 and 7 wt% Y2O3 were prepared to study the influence of t he processing conditions on the mechanical properties. The minimum additive content required for nearly complete densification (>98.5%) was only 2 wt% Y2O3. However, densification was limited to certain Y2O3/SiO2 ratios. The additive-rich samples revealed a mean strength at room temperature up to 80 0 MPa which degrades at 1400 degrees C. The material with only 2 wt% Y2O3 h as a room temperature strength of similar to 500 MPa, but no strength degra dation up to 1400 degrees C. The lower strength correlates with a pronounce d increase in brittleness with a decreasing additive content indicated by a fracture toughness of only 2.5 MPam(1/2) for composition 2/0. The investig ated materials exhibit a relatively high creep resistance at 1400 degrees C with creep rates down to 1.5x10(-9) s(-1). (C) 1999 Elsevier Science Ltd. All rights reserved.